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date: 10 December 2019

Abstract and Keywords

This article describes the use of tip-enhanced near-field Raman spectroscopy for the characterization of materials at the nanoscale. Tip-enhanced near-field Raman spectroscopy utilizes a metal-coated sharp tip and is based on surface-enhanced Raman scattering (SERS). Instead of the large surface enhancement from the metallic surface in SERS, the sharp metal coated tip in the tip-enhanced Raman scattering (TERS) provides nanoscaled surface enhancement only from the sample molecules in the close vicinity of the tip-apex, making it a perfect technique for nanoanalysis of materials. This article focuses on near-field analysis of some semiconducting nanomaterials and some carbon nanostructures. It first considers SERS analysis of strained silicon and TERS analysis of epsilon-Si and GaN thin layers before explaining how to improve TERS sensitivity and control the polarization in detection for crystalline materials. It also discusses ways of improving the spatial resolution in TERS.

Keywords: near-field Raman spectroscopy, surface-enhanced Raman scattering, tip-enhanced Raman scattering, nanoanalysis, semiconducting nanomaterials, carbon nanostructures, strained silicon, thin layers, crystalline materials, spatial resolution

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